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Carriers multiplication in neighboring surfactant-free silicon nanocrystals produced by 3D-surface engineering in liquid medium.

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4 Author(s)
Svrcek, V. ; Res. Center for Photovoltaics, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan ; Mariotti, D. ; Matsubara, K. ; Kondo, M.

Carriers multiplication in silicon nanocrystals (Si-ncs) in a one promising eefect to considerably enhance conversion efficiency of solar cells that can overcome theoretical limits. A close proximity of Si-ncs is an essential factor for carrier multiplication due to the separated quantum cutting effect. In this study we present results on investigation of 3-dimensional (3D) surface engineering of Si-ncs directly in water. Thus at the same time allow close proximity Si-ncs without of using any surfactant. The approach is based on ns laser treatment of Si-ncs dispersed in liquid solution. We explore the excitation wavelength dependence of photoluminescence quantum yield (ratio of the number of emitted and absorbed photons) for Si-ncs as prepared and surface engineered by ns laser processing. Our results suggest that close proximity of Si-ncs in spherical particles induced by laser processing might enhance also carriers multiplication.

Published in:

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Date of Conference:

3-8 June 2012