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Carbon single wall nanotube (SWNT) films were applied as electrodes to replace the p-layer in hydrogenated amorphous silicon (a-Si:H) solar cells. Devices were fabricated by transferring vacuum-filtered SWNT films of varying thickness onto a-Si:H layers grown by plasma enhance chemical vapor deposition on Pilkington TEC 15 glass substrates. Cells incorporating SWNTs were illuminated from each side (glass / SWNT). A cell illuminated through a 25 nm thick SWNT film yielded short circuit current density, open circuit voltage, and efficiency of 5.47 mA/cm2, 0.793 V, and 1.46%, respectively. Maximum quantum efficiency of 48% was measured at 475 nm for the same device.