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Intermediate band solar cells using in-plane ultrahigh-density InAs/GaAsSb quantum-dot sheets

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4 Author(s)
Eguchi, Y. ; Dept. of Eng. Sci., Univ. of Electro-Commun., Tokyo, Japan ; Shiokawa, M. ; Sakamoto, K. ; Yamaguchi, K.

In-plane ultrahigh-density InAs QDs with 5×1011cm-2 were successfully grown on the GaAsSb/GaAs(001). The QD sheets with type-1 and type-2 band structures were inserted into the pn-GaAs solar cells. In spite of only one QD sheet, the additional quantum efficiency was clearly observed at a long wavelength region of 900~1200 nm. The additional quantum efficiency for the type-2 QD cell was obtained at a wide wavelength region (1400 nm) and was higher than that for the type-1 QD cell. However, the open circuit voltage for the type-2 QD cell decreased as compared with that for type-1 QD cell. In addition, a separation distance from the p-layer to the type-1 QD sheet influenced on the cell performance.

Published in:

Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE

Date of Conference:

3-8 June 2012

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