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Disorder induced semiconductor to metal transition and modifications of grain boundaries in nanocrystalline zinc oxide thin film

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6 Author(s)
Singh, Fouran ; Materials Science Group, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India ; Chaudhary, Babloo ; Kumar, Vinod ; Singh, R. G.
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This paper report on the disorder induced semiconductor to metal transition (SMT) and modifications of grain boundaries in nanocrystalline zinc oxide thin film. Disorder is induced using energetic ion irradiation. It eliminates the possibility of impurities induced transition. However, it is revealed that some critical concentration of defects is needed for inducing such kind of SMT at certain critical temperature. Above room temperature, the current-voltage characteristics in reverse bias attributes some interesting phenomenon, such as electric field induced charge transfer, charge trapping, and diffusion of defects. The transition is explained by the defects induced disorder and strain in ZnO crystallites created by high density of electronic excitations.

Published in:

Journal of Applied Physics  (Volume:112 ,  Issue: 7 )