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Chemical assembly and electrical characteristics of surface-rich topological insulator Bi2Se3 nanoplates and nanoribbons

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4 Author(s)
Jacobs-Gedrim, Robin B. ; College of Nanoscale Science and Engineering, State University of New York, Albany, New York 12203, USA ; Durcan, Chris A. ; Jain, Nikhil ; Yu, Bin

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4756942 

We demonstrate synthesis of low-dimensional, surface-rich bismuth selenide nanoplates and nanoribbons through a low-pressure chemical-vapor-deposition method. The single crystalline lattice structure, morphology, and chemical composition of the synthesized nanoplates and nanoribbons are analyzed. As-prepared samples are found to be all n-type doped. Very large surface-to-volume ratios have been achieved in these low-dimensional nanostructures, making them ideal for investigating topological insulator properties. Gate-controlled bismuth selenide nanoplate field-effect transistors are fabricated and basic electrical behavior is characterized.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 14 )

Date of Publication:

Oct 2012

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