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We demonstrate synthesis of low-dimensional, surface-rich bismuth selenide nanoplates and nanoribbons through a low-pressure chemical-vapor-deposition method. The single crystalline lattice structure, morphology, and chemical composition of the synthesized nanoplates and nanoribbons are analyzed. As-prepared samples are found to be all n-type doped. Very large surface-to-volume ratios have been achieved in these low-dimensional nanostructures, making them ideal for investigating topological insulator properties. Gate-controlled bismuth selenide nanoplate field-effect transistors are fabricated and basic electrical behavior is characterized.