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Asymmetric Tunnel Field-Effect Transistors as Frequency Multipliers

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4 Author(s)
Madan, H. ; Pennsylvania State Univ., University Park, PA, USA ; Saripalli, V. ; Huichu Liu ; Datta, S.

This letter proposes a novel application of asymmetric (double-gate) tunnel field-effect transistors (asymmetric TFETs) as a frequency multiplier. Work-function tuning of an asymmetric TFET was used to demonstrate symmetric ambipolar transfer characteristics by TCAD simulation. Unlike the conventional balanced FET-based multiplier, the asymmetric TFET design needs only one transistor for rejecting odd harmonics. Advanced design system simulations are used to compare the performance of an n-type FET and an asymmetric TFET frequency multiplier.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 11 )