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Tungsten oxide nanowires are integrated into gated wing-type field emission display (FED) devices, which are synthesized at low temperature of 550 °C by catalyzed-growth CVD way. The emission behaviors of the device are testified by transparent anode way to investigate their future application. These WO2 FED devices are found to have a turn-on field of 5.76 V/μm and their emission current density reaches 0.59 mA/cm2 when the applied field is 7.55 V/μm. It suggests that they should have a promising future in field emission applications if their emission uniformity can be further improved.