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The tunable plasmonic resonant absorption in grating-gate GaN-based HEMTs for THz detection

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5 Author(s)
Weida Hu ; Nat. Lab. for Infrared Phys., Shanghai Inst. of Tech. Phys., Shanghai, China ; Lin Wang ; Nan Guo ; Xiaoshuang Chen
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The plasmonic resonant phenomenon in terahertz wave band for GaN-based high electron mobility transistors is investigated by using finite difference scheme. Strong resonant absorptions can be obtained with large area slit grating-gate serves both as electrodes and coupler. Such kinds of plasmonic resonant detection devices are compatible to the well-developed GaN process, and possibly overcome the difficulty in fabricating ultra-short-gate devices for terahertz applications.

Published in:

Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th International Conference on

Date of Conference:

28-31 Aug. 2012