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Research on rapid thermal annealing of ohmic contact to GaAs

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6 Author(s)
Yinghong Wang ; Nat. Key Lab. on High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China ; Yong Wang ; Lujie Li ; Yuanhong Zhao
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In order to increase heat dispersion and improve power and reliability of GaAs-based semiconductor lasers, the rapid thermal annealing (RTA) of ohmic contact to GaAs were optimized. The ohmic contact multi-layer metals of Ni/AuGe/Ni/Au on n-GaAs and Ti/Pt/Au on p-GaAs at annealing temperature of 380~460°C and annealing duration of 40s~80s were calibrated. The rectangular transmission line model (RTLM) were adopted to calculate the specific contact resistance. For n-GaAs ohmic contact, the optimized contact resistivity is 2.76×10-6 Ω·cm2 at annealing temperature of 420°C for 60s. Under the same annealing conditions for p-GaAs, the contact resistivity is 3.91×10-5 Ω·cm2. The 808nm laser diode with double-side light output using the optimized RTA conditions, the maximum output power is more than 3W at operating current of 4A.

Published in:

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Date of Conference:

23-25 Aug. 2012