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It is very important to be able to predict the amount of the power losses related to the power switches with good accuracy in the design phase of power converters since a poor estimation can considerably extend the time needed for the development of the devices. This paper illustrates a method to calculate with satisfactory accuracy the power losses in power converters, based on the measured switching currents and voltages of semiconductor devices. It represents a further development and an improvement of previous studies and includes an automatic compensation of voltage and current offsets. Experimental measurements of the conduction voltage drops of insulated-gate bipolar transistors and diodes have been performed and compared with manufacturer's data to validate the method. The method was then applied to a power converter chosen as representative, using the experimental data as input. The results are reported and discussed.