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A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme

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28 Author(s)
Kyomin Sohn ; Samsung Electron., Hwaseong, South Korea ; Taesik Na ; Indal Song ; Yong Shim
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A 1.2 V 4 Gb DDR4 SDRAM is presented in a 30 nm CMOS technology. DDR4 SDRAM is developed to raise memory bandwidth with lower power consumption compared with DDR3 SDRAM. Various functions and circuit techniques are newly adopted to reduce power consumption and secure stable transaction. First, dual error detection scheme is proposed to guarantee the reliability of signals. It is composed of cyclic redundancy check (CRC) for DQ channel and command-address (CA) parity for command and address channel. For stable reception of high speed signals, a gain enhanced buffer and PVT tolerant data fetch scheme are adopted for CA and DQ respectively. To reduce the output jitter, the type of delay line is selected depending on data rate at initial stage. As a result, test measurement shows 3.3 Gb/s DDR operation at 1.14 V.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:48 ,  Issue: 1 )