By Topic

All-Optical Switch Characteristics of 1-D Resonant Photonic Crystal With InAs Multiple-Quantum-Dot Layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Zhenhua Hu ; Dept. of Phys. & Technol., Wuhan Univ. of Technol., Wuhan, China ; Houxiang Wu ; Shen Gao ; Tao Wang

The reflectivity of a novel InAs/GaAs 1-D resonant photonic crystal (RPC), consisting of 400 periods of InAs quantum dot (QD) layer and GaAs barrier layer, is theoretically investigated by using the transfer matrix method. In our calculations, both a homogeneous broadening (phonon-induced broadening) associated with temperature and other inhomogeneous broadening, rising from the QD size fluctuations in the QD layer, are taken into consideration. Numerical results show that the stopband reflectivity of the QD-RPC is very sensitive to both temperature and size fluctuations. The QD-RPC, as an all optical switch, has a high extinction ratio that can be up to 25 dB for a signal pulse duration of 60 ps at a temperature 10 K, and can be in excess of 10 dB at 70 K by using a pump (control) pulse less than 1 MW/cm2 for a given standard deviation of relative size fluctuation 0.2%. Also, the switch is characterized by spin-independent polarizations of both the signal and pump lights.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:48 ,  Issue: 11 )