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Temperature-dependent electrical resistivity, ρ(T), and thermal conductivity, k(T), of nanocrystalline silicon microwires self-heated to melt are extracted by matching simulated current-voltage (I-V) characteristics to experimental I-V characteristics. Electrical resistivity is extracted from highly doped p-type wires on silicon dioxide in which the heat losses are predominantly to the substrate and the self-heating depends mainly on ρ(T) of the wires. The extracted ρ(T) decreases from 11.8 mΩ cm at room-temperature to 5.2 mΩ cm at 1690 K, in reasonable agreement with the values measured up to ∼650 K. Electrical resistivity and thermal conductivity are extracted from suspended highly doped n-type silicon wires in which the heat losses are predominantly through the wires. In this case, measured ρ(T) (decreasing from 20.5 mΩ cm at room temperature to 12 mΩ cm at 620 K) is used to extract ρ(T) at higher temperatures (decreasing to 1 mΩ cm at 1690 K) and k(T) (decreasing from 30 W m-1 K-1 at room temperature to 20 W m-1 K-1 at 1690 K). The method is tested by using the extracted parameters to model wires with different dimensions. The experimental and simulated I-V curves for these wires show good agreement up to high voltage and temperature levels. This technique allows extraction of the electrical resistivity and thermal conductivity up to very high temperatures from self-heated microstructures.