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Spectroscopic analysis of Al and N diffusion in HfO2

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6 Author(s)
Lysaght, P.S. ; SEMATECH, 257 Fuller Rd, Albany, New York 12203, USA ; Woicik, J.C. ; Sahiner, M.A. ; Price, J.
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X-ray photoelectron core level spectroscopy, secondary ion mass spectroscopy, spectroscopic ellipsometry, and extended x-ray absorption fine structure measurements have been employed to distinguish the effects of Al and N diffusion on the local bonding and microstructure of HfO2 and its interface with the Si substrate in (001)Si/SiOx/2 nm HfO2/1 nm AlOx film structures. The diffusion of Al from the thin AlOx cap layer deposited on both annealed and unannealed HfO2 has been observed following anneal in N2 and NH3 ambient. Both N2 and NH3 subsequent anneals were performed to decouple incorporated nitrogen from thermal reactions alone. Causal variations in the HfO2 microstructure combined with the dependence of Al and N diffusion on initial HfO2 conditions are presented with respect to anneal temperature and ambient.

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Journal of Applied Physics  (Volume:112 ,  Issue: 6 )