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\Omega -Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

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9 Author(s)
Richter, S. ; Peter Grunberg Inst. 9, JARA-FIT, Forschungszentrum Julich, Jülich, Germany ; Sandow, C. ; Nichau, A. ; Trellenkamp, S.
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This letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon nanowires. The gate control of a SiO2/poly-Si gate stack is compared with a high-k/metal gate stack. Steep inverse subthreshold slopes down to 76 mV/dec and relatively high on-currents were achieved with the combination of high-k/metal gate and strained silicon nanowires. We observed negative differential conductance in the output characteristics, which we attribute to hot-carrier effects in the strong electric fields at the reverse-biased tunnel junction.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 11 )

Date of Publication:

Nov. 2012

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