Cart (Loading....) | Create Account
Close category search window

Assessment of NBTI in Presence of Self-Heating in High- k SOI FinFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Monga, U. ; Intel Mobile Commun. GmbH, Neubiberg, Germany ; Khandelwal, S. ; Aghassi, J. ; Sedlmeir, J.
more authors

We have experimentally investigated the threshold voltage shift due to negative bias temperature instability (NBTI). The NBTI stress in the absence of self-heating (SH) is performed at two different temperatures, i.e., T = 25°C and 125°C, at bias conditions: gate voltage Vgs = -2& V and drain voltage Vds = 0 V. To evaluate the effect of NBTI in the presence of SH, the stress is performed at room temperature and at Vgs = -2 V and Vds = -1 V. It has been observed that NBTI in the presence of SH causes a significant shift in the threshold voltage.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 11 )

Date of Publication:

Nov. 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.