On line monitoring of RF power amplifiers with embedded temperature sensors

In the present paper we analyze that DC temperature measurements of the silicon surface can be used to monitor the high frequency status and performances of class A RF Power Amplifiers. As a proof of concept, we present experimental results obtained with a 65 nm CMOS IC that contains a 2 GHz linear class A Power Amplifier and a very simple differential temperature sensor. Results show that the PA output power can be tracked from DC temperature measurements.