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On line monitoring of RF power amplifiers with embedded temperature sensors

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3 Author(s)
Altet, J. ; Electron. Eng. Dept., Univ. Politec. de Catalunya, Barcelona, Spain ; Mateo, D. ; Gomez, D.

In the present paper we analyze that DC temperature measurements of the silicon surface can be used to monitor the high frequency status and performances of class A RF Power Amplifiers. As a proof of concept, we present experimental results obtained with a 65 nm CMOS IC that contains a 2 GHz linear class A Power Amplifier and a very simple differential temperature sensor. Results show that the PA output power can be tracked from DC temperature measurements.

Published in:

On-Line Testing Symposium (IOLTS), 2012 IEEE 18th International

Date of Conference:

27-29 June 2012

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