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An improved automatic test system for VLSI parametric testing

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3 Author(s)
Fang, R.C.Y. ; Integrated Circuit Lab., Hewlett-Packard Labs., Palo Alto, CA, USA ; Rung, R.D. ; Cham, Kit M.

Automated and thorough characterization of MOS transistors has been made possible by using a minicomputer-based instrumentation system. A low-current circuit capable of forcing current levels down to the range of 10 pA has been designed on the personality board, allowing fast measurements of subthreshold characteristics. A comprehensive test program has been developed to extract device parameters, such as threshold voltage, subthreshold slope, intrinsic mobility, mobility degradation, effective-channel doping, body effect, ΔL, ΔW, series resistance, and carrier-saturation velocity. Data management software also provides detailed statistical analysis. The technique is found to be a powerful and essential tool for VLSI process development.

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Instrumentation and Measurement, IEEE Transactions on  (Volume:IM-31 ,  Issue: 3 )