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High saturation power 1.3-μm MQW electroabsorption waveguide modulators on GaAs substrates

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4 Author(s)
Loi, K.K. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; Shen, L. ; Wieder, H.H. ; Chang, W.S.C.

An analog InGaAs-InAlAs multiple-quantum-well electroabsorption waveguide modulator operating at 1.32-μm wavelength has been designed, fabricated, and characterized for the first time on a GaAs substrate. A typical 3-μm-wide 115-μm-long device exhibits a high optical saturation power in excess of 17 mW and a 3-dB electrical bandwidth of 20 GHz. An equivalent half-wave voltage V/sub /spl pi// of 2.8 V has also been achieved.

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:7 ,  Issue: 10 )