Referenced Items are not available for this document.
An analog InGaAs-InAlAs multiple-quantum-well electroabsorption waveguide modulator operating at 1.32-μm wavelength has been designed, fabricated, and characterized for the first time on a GaAs substrate. A typical 3-μm-wide 115-μm-long device exhibits a high optical saturation power in excess of 17 mW and a 3-dB electrical bandwidth of 20 GHz. An equivalent half-wave voltage Vπ of 2.8 V has also been achieved
Published in:
Microwave and Guided Wave Letters, IEEE
(Volume:7
,
Issue:
10
)
Date of Publication: Oct 1997
- Page(s):
- 320 - 322
- ISSN :
- 1051-8207
- INSPEC Accession Number:
- 5721261
- Digital Object Identifier :
- 10.1109/75.631188
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct 1997
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
