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Direct nitridation of silicon surface by high-density inductively coupled plasma

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6 Author(s)
Antonenko, A.K. ; Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia ; Arzhannikova, S.A. ; Volodin, V.A. ; Efremov, M.D.
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Ultra-thin silicon oxy-nitride films were created. The films were obtained by using direct N plasma treatment in plasma-chemical reactor with a wide aperture source. Properties of the films were examined by various methods and their good electron quality was confirmed. Features of film growth mechanism are discussed.

Published in:

Micro/Nanotechnologies and Electron Devices (EDM), 2012 IEEE 13th International Conference and Seminar of Young Specialists on

Date of Conference:

2-6 July 2012