Referenced Items are not available for this document.
This letter presents the first 45 nm CMOS SOI LNA/phase shifter for 60 GHz applications. The 3 b phase shifter is designed using a switched-LC approach and results in only 6 dB loss at 65 GHz. The LNA/phase shifter front-end results in a gain of 6.5 dB, a noise figure of 4.3 dB, and an input <;i>;P<;/i>;1dB of - 13.5 dBm (limited by the amplifier) with a power consumption of 15 mW. This work shows that advanced CMOS processes are essential for low power, medium linearity 60 GHz phased arrays.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:22
,
Issue:
10
)
Date of Publication: Oct. 2012
- Page(s):
- 530 - 532
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 13030352
- Digital Object Identifier :
- 10.1109/LMWC.2012.2218651
- Product Type:
- Journals & Magazines
- Date of Publication :
- 21 September 2012
- Date of Current Version :
- 03 October 2012
- Issue Date :
- Oct. 2012
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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