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A 65 GHz LNA/Phase Shifter With 4.3 dB NF Using 45 nm CMOS SOI

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2 Author(s)
Mehmet Uzunkol ; Electr. & Comput. Eng. Dept., Univ. of California San Diego, La Jolla, CA, USA ; Gabriel M. Rebeiz

This letter presents the first 45 nm CMOS SOI LNA/phase shifter for 60 GHz applications. The 3 b phase shifter is designed using a switched-LC approach and results in only 6 dB loss at 65 GHz. The LNA/phase shifter front-end results in a gain of 6.5 dB, a noise figure of 4.3 dB, and an input <;i>;P<;/i>;1dB of - 13.5 dBm (limited by the amplifier) with a power consumption of 15 mW. This work shows that advanced CMOS processes are essential for low power, medium linearity 60 GHz phased arrays.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:22 ,  Issue: 10 )