By Topic

A Discussion of SiC Prospects in Next Electrical Grid

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Rui Wu ; China Electr. Power Res. Inst. (CEPRI), Beijing, China ; JiaLiang Wen ; Kunshan Yu ; Dongyuan Zhao

Currently, silicon carbide (SiC) technology is developing rapidly. Compared to conventional silicon devices, it has high voltage, high temperature, fast switching speed and low on-resistance and other excellent features. Thus it will play an invaluable role in the next electrical grid. This paper describes the basic characteristics and development of SiC devices. Combined with the future requirements of the grid, it also presents several typical applications of SiC devices in future, such as HVDC, VSC-HVDC, DC grid power technology, solid state power electronics technology.

Published in:

Power and Energy Engineering Conference (APPEEC), 2012 Asia-Pacific

Date of Conference:

27-29 March 2012