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A Discussion of SiC Prospects in Next Electrical Grid

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4 Author(s)
Rui Wu ; China Electr. Power Res. Inst. (CEPRI), Beijing, China ; JiaLiang Wen ; Kunshan Yu ; Dongyuan Zhao

Currently, silicon carbide (SiC) technology is developing rapidly. Compared to conventional silicon devices, it has high voltage, high temperature, fast switching speed and low on-resistance and other excellent features. Thus it will play an invaluable role in the next electrical grid. This paper describes the basic characteristics and development of SiC devices. Combined with the future requirements of the grid, it also presents several typical applications of SiC devices in future, such as HVDC, VSC-HVDC, DC grid power technology, solid state power electronics technology.

Published in:

Power and Energy Engineering Conference (APPEEC), 2012 Asia-Pacific

Date of Conference:

27-29 March 2012

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