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Defect-free GaAs/AlAs distributed Bragg reflector mirrors an patterned InP-based heterostructures: application to 1.55 μm VCSELs

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6 Author(s)
Gebretsadik, H. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Kamath, K. ; Linder, K. ; Bhattacharya, P.
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We demonstrate here the MBE growth of GaAs-AlAs λ/4 Bragg mirrors (λ=1.55 μm) on patterned InP-based quantum well vertical cavity surface-emitting lasers (VCSEL) heterostructures, with misfit of 3.7%, without the generation of misfit dislocations

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE  (Volume:1 )

Date of Conference:

10-13 Nov 1997