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1.27 μm resonant cavity PIN photodetector using an InAs/GaAs quantum dot active region grown on GaAs

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4 Author(s)
Huffaker, D.L. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Deng, H. ; Campbell, J.C. ; Deppe, D.G.

In this talk we describe, to our knowledge, the first optoelectronic device based on InGaAs quantum dots (QDs) grown directly on GaAs that operate at 1.3 μm. The device is an InAs-GaAs QD resonant cavity PIN photodiode, which shows a surprisingly high 49% peak detection efficiency at the wavelength of 1267 nm

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE  (Volume:1 )

Date of Conference:

10-13 Nov 1997

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