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Low-temperature grown GaAs traveling wave PIN photodetector with high bandwidth

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3 Author(s)
Yi-Jen Chiu ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Meischer, S.B. ; Bowers, J.E.

Summary form only given. In summary, we have demonstrated a novel travelling wave photodetector (TWPD) by low temperature grown (LTG) GaAs with 1.1 ps pulse response. The bandwidth is twice as high as previous demonstration for traveling wave structure or for PIN structures

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE  (Volume:1 )

Date of Conference:

10-13 Nov 1997