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Low-Capacitance SCR Structure for RF I/O Application

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6 Author(s)
Shurong Dong ; Dept. of Inf. & Electron. Eng., Zhejiang Univ., Hangzhou, China ; Meng Miao ; Jian Wu ; Jie Zeng
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Electrostatic discharge (ESD) devices based on diodes and silicon controlled rectifier for RF I/O protection are evaluated on both ESD and RF performance. Varying from the architecture, layout design and metal interconnection, candidate devices show different parasitic capacitance, ESD efficiency, and turn on speed. Potential solution for further RF I/O application is verified.

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Electromagnetic Compatibility, IEEE Transactions on  (Volume:55 ,  Issue: 2 )