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Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

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3 Author(s)
Heo, Jaeyeong ; Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA ; Bok Kim, Sang ; Gordon, Roy G.

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Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 °C. The highest field effect mobility was ∼13 cm2/V·s with on-to-off ratios of drain current ∼109–1010. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel layers grown at 170 °C showed better transistor properties than those grown at 120 °C. Channels with higher zinc to tin ratio (∼3–4) also performed better than ones with lower ratios (∼1–3).

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 11 )