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GaN power electronics for automotive application

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3 Author(s)
Boutros, K.S. ; HRL Labs., Malibu, CA, USA ; Rongming Chu ; Hughes, B.

Gallium Nitride power devices are poised to replace silicon-based MOSFETs and IGBTs in automotive power switching applications. With its projected 100× performance advantage over silicon, GaN is a game changing technology for power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the remaining challenges facing the technology.

Published in:

Energytech, 2012 IEEE

Date of Conference:

29-31 May 2012