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GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach

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2 Author(s)
Zhi Chen ; Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA ; Mohammad, S.Noor

A high quality Si3N4/Si/p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9×1010 eV 1 cm-2 was obtained from the conductance measurements. A depletion-mode MISFET with a transconductance of 85 mS/mm has been fabricated using this ex-situ growth approach

Published in:

Electronics Letters  (Volume:33 ,  Issue: 22 )