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MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs(311)B substrate

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5 Author(s)
Mizutani, A. ; Precision & Intell. Lab., Tokyo Inst. of Technol., Japan ; Hatori, N. ; Nishiyama, N. ; Koyama, F.
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The authors have realised an InGaAs/GaAs vertical cavity surface emitting laser grown on a GaAs (311)B substrate by metalorganic chemical-vapour deposition. A carbon auto-doping technique was used to avoid the difficulty of p-type doping (>1019 cm-3 ) AlAs for a distributed Bragg reflector. A low electrical resistance of p-type GaAs/AlAs DBRs on GaAs (311)B was obtained by using delta doping and compositional grading layers. The lowest threshold was 16mA at room temperature CW operation for a 50 μm diameter device. The threshold current density is 810 A/cm2 which is reasonably low for non-optimised experimental conditions. The polarisation state was stable

Published in:

Electronics Letters  (Volume:33 ,  Issue: 22 )

Date of Publication:

23 Oct 1997

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