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Device sensitivity of field-plated polysilicon high-voltage TFTs and their application to low-voltage operation

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5 Author(s)
T. -Y. Huang ; Xerox Palo Alto Res. Center, CA, USA ; I. -W. Wu ; A. G. Lewis ; A. Chiang
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The device sensitivity to the offset length variations in the recently proposed field-plated (FP) polysilicon high-voltage thin-film transistor (HVTFT) has been studied. The device characteristics of the new FP-HVTFTs are found to be much more immune to misalignment errors; this is a very desirable feature, especially for large-area applications. FP-HVTFTs also exhibit lower leakage current than their conventional counterparts for up to 100-V operation. At typical low-voltage operation (e.g. 20 V), an improvement of about three orders of magnitude in the on/off current ratio can be readily achieved. These features, together with the simpler processing and improved turn-on characteristics reported earlier, make the FP-TFT a very promising device architecture for large-area microelectronics.<>

Published in:

IEEE Electron Device Letters  (Volume:11 ,  Issue: 11 )