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Low-Operating-Voltage Ultrathin Junctionless Poly-Si Thin-Film Transistor Technology for RF Applications

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7 Author(s)
Tzu-I Tsai ; Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Kun-Ming Chen ; Horng-Chih Lin ; Ting-Yao Lin
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In this letter, for the first time, we experimentally investigate the radio-frequency (RF) characteristics and low-frequency noise (LFN) of n-type planar junctionless (JL) poly-Si thin-film transistors (TFTs). The fabricated JL devices show remarkable dc performance with good current drive and a high on-current/off-current ratio of 8 × 107. Furthermore, with the implementation of an in situ phosphorus-doped channel architecture and a salicide process, the JL device with a channel length of 0.4 μm exhibits a cutoff frequency (ft) of 3.36 GHz and a maximum oscillation frequency (fmax) around 7.37 GHz at a drain bias of 2 V. As far as LFN is concerned, the JL device shows approximately four orders of magnitude lower drain-current noise power spectral density (Sid) over conventional inversion-mode counterparts. These results demonstrate that the JL poly-Si TFT technique is promising for RF modules implemented in system-on-panel applications.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 11 )

Date of Publication:

Nov. 2012

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