By Topic

Novel properties of a 0.1- mu m-long split-gate MODFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ismail, K. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Lee, K.Y. ; Kern, D.P. ; Hong, J.

A MODFET with two 30-nm-long gates (separated by 40 nm) has been fabricated using ultrahigh-resolution electron-beam lithography. The proximity of the two gate fingers along with the ability to independently bias them results in the following features: (a) tunability of the threshold voltage, (b) enhancement of the transconductance, especially at low current levels, (c) reduction in short-channel effects, and (d) high-voltage gain and cutoff frequency.<>

Published in:

Electron Device Letters, IEEE  (Volume:11 ,  Issue: 10 )