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InGaAs/InAlAs/InP collector-up microwave heterojunction bipolar transistors

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5 Author(s)
Sato, H. ; Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA ; Vlcek, James C. ; Fonstad, C.G. ; Meskoob, B.
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Collector-up InGaAs/InAlAs/InP heterojunction bipolar transistors (HBTs) were successfully fabricated, and their DC and microwave characteristics measured. High collector current density operation (J/sub c/>30 kA/cm/sup 2/) and high base-emitter junction saturation current density (J/sub 0/>10/sup -7/ A/cm/sup 2/) were achieved. A cutoff frequency of f/sub t/=24 GHz and a maximum frequency of oscillation f/sub max/=20 GHz at a collector current density of J/sub 0/=23 kA/cm/sup 2/ were achieved on a nominal 5- mu m*10- mu m device.<>

Published in:

Electron Device Letters, IEEE  (Volume:11 ,  Issue: 10 )

Date of Publication:

Oct. 1990

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