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A New Quasi-2-D Threshold Voltage Model for Short-Channel Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs

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1 Author(s)
Te-Kuang Chiang ; Electr. Eng. Dept., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan

Based on the quasi-2-D scaling equation, a new threshold voltage model for short-channel junctionless (JL) cylindrical surrounding gate (JLCSG) MOSFETs is developed. The model explicitly shows how the device parameters such as the silicon thickness, oxide thickness, drain bias, and channel length affect the threshold voltage behavior. The model can also be extendable to its counterpart of junction-based cylindrical surrounding gate (JBCSG) MOSFETs. The model is verified by its calculated results matching well with those of the 3-D numerical simulator and can be easily used to explore the threshold voltage characteristics of JLCSG MOSFETs for its simple formula and computational efficiency.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 11 )