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Enlarged Photodetection Using {\rm SiO}_{x} Nanowire Arrays

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6 Author(s)
Aniruddha Mondal ; Department of Electronics and Communication Engineering, National Institute of Technology, Agartala, India ; Naorem Khelchand Singh ; P. Chinnamuthu ; Jay Chandra Dhar
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We have synthesized perpendicular SiOx nanowire (NW) arrays on Si substrates and investigated them using scanning electron microscopy. Transmission electron microscopy and energy-dispersive spectroscopy have been used to investigate the single NW structure. A near-infrared emission at 700 nm is observed. In/SiOx NW and In/SiOx thin film (TF) contacts exhibit Schottky behavior. The SiOx NW-based devices show six-fold improvements in photodetection efficiency in white-light illumination, compared to SiOx TF-based devices under reverse bias condition.

Published in:

IEEE Photonics Technology Letters  (Volume:24 ,  Issue: 22 )