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The effects of nuclear radiation on P-channel CCD imagers

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3 Author(s)
Spratt, J.P. ; Full Circle Res. Inc., San Marcos, CA, USA ; Passenheim, B.C. ; Leadon, R.E.

Analysis of the relationship between the Charge Transfer Efficiency (CTE) and dark current of CCD imagers, and the defects introduced into silicon by displacement damage, led to the prediction that P-channel CCDs would be more radiation hard than conventional N-channel CCDs. Proton and Co60 testing of 1024×640 P-channel CCD imagers confirmed this prediction, showing significant reduction in CTE degradation compared to N-channel devices. Also, dark current data shows that “hot pixel” generation is significantly reduced in these devices

Published in:

Radiation Effects Data Workshop, 1997 IEEE

Date of Conference:

24 Jul 1997