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Total ionizing dose effects on 64 Mb 3.3 V DRAMs

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3 Author(s)
Lee, C.I. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Nguyen, D.N. ; Johnston, A.H.

64 Mb 3.3 V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response. Burned-in devices failed functionally at lower total dose levels. Results showed that these scaled DRAMs are about twice as hard as older generation 16 Mb commercial DRAMs

Published in:

Radiation Effects Data Workshop, 1997 IEEE

Date of Conference:

24 Jul 1997