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An Ultra-Low-Cost High-Performance Bluetooth SoC in 0.11- \mu{\hbox {m}} CMOS

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16 Author(s)
Tan, S.C.-G. ; MediaTek Singapore Ltd., Singapore, Singapore ; Fei Song ; Renliang Zheng ; Jiqing Cui
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A highly integrated ultra-low-cost high-performance Bluetooth 3.0+EDR SoC is implemented in 0.11-μm digital CMOS technology. The transceiver has an integrated balun shared between TX and RX, eliminating the need for a separate T/R switch. A 4 × LO-based VCO is implemented to reduce LO pulling and to minimize TX out-of-band spurious emissions. The transmitter provides high output power of +10 and +7 dBm in BDR and EDR3 modes respectively, with 1.5-kHz frequency stability and <; 6% rms DEVM. The receiver sensitivity is -95.5, - 96.5, and -89 dBm for BDR, EDR2, and EDR3 modes respectively. Total SoC DC current consumption for continuous TX transmission at +10 dBm output power is 48 mA and for continuous RX reception at reference sensitivity level is 35 mA. Total die size is 5.7 mm2, of which 1.8 mm2 is occupied by RF, analog, and PMU circuits.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:47 ,  Issue: 11 )

Date of Publication:

Nov. 2012

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