By Topic

Investigating Voltage as a Function of the Reduced Junction Area for Thin Silicon Solar Cells That Utilize Epitaxial Lateral Overgrowth

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Ruiying Hao ; Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA ; Murcia, C.P. ; Leitz, C. ; Gerger, A.P.
more authors

In this paper, we fabricate and analyze thin silicon solar cells that are designed to have an increased voltage due to reduced junction area. This reduced junction area is achieved by using epitaxial lateral overgrowth to grow an n-Si photon absorber on a p+ Si substrate. We measure and analyze the voltage of these solar cells as a function of the junction area but find that the voltage does not demonstrate the expected gain with the reduced area. Scanning electron microscopic (SEM) cross sections indicate that the loss in voltage arises mainly from the poor quality of the lateral overgrowth region. Thus, future work will focus on improving this region's quality.

Published in:

Photovoltaics, IEEE Journal of  (Volume:3 ,  Issue: 1 )