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The effect of interfaces on magnetic activation volumes in single crystal Co2FeSi Heusler alloy thin films

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7 Author(s)
Sagar, J. ; Department of Physics, The University of York, York YO10 5DD, United Kingdom ; Sukegawa, H. ; Lari, L. ; Lazarov, V.K.
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Structural and magnetization reversal studies have been carried out on single crystal Co2FeSi thin films grown on MgO (001) substrates. The films are highly L21 ordered after annealing above 500 °C. Magnetization reversal has been investigated by measurements of the activation volumes (Vact) within the films. This volume represents the unit of reversal in a magnetic material. Vact (∼4 × 103 nm3) has been found to be independent of the physical structure. Vact is found to correspond to an array of periodic misfit dislocations at the Co2FeSi/MgO interface. Such a small Vact potentially prevents coherent magnetization reversal as required for giant magnetoresistance or tunnel magnetoresistance devices.

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Applied Physics Letters  (Volume:101 ,  Issue: 10 )