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Mg acceptor doping of In2O3 and overcompensation by oxygen vacancies

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2 Author(s)
Bierwagen, Oliver ; Department of Materials, University of California, Santa Barbara, California 93106, USA ; Speck, James S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4751854 

Mg-doped indium oxide (In2O3) thin films were grown by plasma-assisted molecular beam epitaxy with Mg-concentrations ranging from 1017 to 6×1020cm-3. In this concentration range Mg was incorporated into In2O3 without discernable impediment nor formation of secondary phases. Despite the role of Mg as acceptor, the films were n-type conductive in the as-grown state or after annealing in vacuum. For Mg-concentrations well in excess of the unintentional donor concentration annealing in oxygen resulted in semi-insulating films without detectable p-type conductivity. These results strongly suggest oxygen vacancies to act as shallow donors in In2O3 that can overcompensate the Mg acceptors.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 10 )

Date of Publication:

Sep 2012

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