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Epitaxial growth and properties of lead-free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition on various single crystal substrates

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9 Author(s)
F. Jean ; Laboratoire de Sciences des Procédés, Céramiques et de Traitements de Surface, UMR 7315 CNRS, Université de Limoges, Limoges, France ; M. Bousquet ; J. -R. Duclère ; A. Boulle
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The epitaxial growth of lead-free ferroelectric Na0.5Bi0.5TiO3 (NBT) thin films on various single crystal substrates was successfully achieved, using the pulsed laser deposition technique (PLD). The present work is divided in two parts, focused on: (i) the growth of NBT layers on c- and r-sapphire (Al2O3) substrates, with and without introducing a CeO2 buffer layer, and (ii) the growth of NBT layers on bare (001)SrTiO3 substrates, with and without introducing a LaNiO3 layer, that could be used as a bottom electrode. In the first part, it was shown that the introduction of a CeO2 buffer layer completely modifies the out-of-plane growth orientation of the NBT films, as well as their microstructure. Indeed, (001)NBT films epitaxially grow only on r-Al2O3 substrates buffered with epitaxial (001)CeO2 layers, while, growing simply NBT on top of bare c or r-Al2O3 substrates, or on top of CeO2/c-Al2O3 heterostructures leads to polycrystalline or textured films. In the second part, we demonstrate that (001)-oriented NBT layers deposited on either bare (001)SrTiO3 or (001)SrTiO3 substrates (STO) covered with (001)LaNiO3 (LNO) are systematically epitaxially grown. Furthermore, the microstructure of the samples is strongly affected by the introduction of the LaNiO3 layer.

Published in:

Proceedings of ISAF-ECAPD-PFM 2012

Date of Conference:

9-13 July 2012