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Influence of annealing temperature on properties of Mn/Y co-doped Ba0.67Sr0.33TiO3 thin film prepared by RF magnetron sputtering

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5 Author(s)
Zunping Xu ; Coll. of Mater. Sci. & Eng, Sichuan Univ., Chengdu, China ; Xiaoyang Chen ; Jianguo Zhu ; Dingquan Xiao
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Mn/Y co-doped Ba0.67Sr0.33TiO3 (Mn+Y: BST) thin films were deposited on LaNiO3 (LNO)/SiO2/Si substrates by radio frequency (RF) magnetron sputtering at substrate temperature of 400 °C. Influence of the annealing temperature on microstructure and electrical properties of the Mn+Y: BST films was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations revealed that all the films have dense and crack-free surface with a perovskite structure. The Mn+Y: BST films annealed at 700 °C showed the best electrical properties, with a dielectric constant of 875, dielectric loss of 0.032, tunability of 60% at room temperature and 100 kHz, and the leakage current density of 6.7×10-5 A/cm2 at an electric field of 400 kV/cm, respectively.

Published in:

Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symp Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 Intl Symp

Date of Conference:

9-13 July 2012