By Topic

Total ionizing dose numerical model for radiation effects estimation in floating gate devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Inza, M.G. ; Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina ; Lipovetzky, J. ; Carbonetto, S. ; Salomone, L.S.
more authors

This work presents a numerical model that allows the estimation of total ionizing dose effects in floating gate devices. The numerical model algorithm is based in a cluster of widely accepted models of the underlying physical phenomena involved in radiation effects on MOS structures. Unlike previously reported models, in addition to the trapping in the floating gate, this work considers a layer of trap centers close to the semiconductor-insulator interface. Radiation tests with FG devices integrated in a CMOS process are shown. These results are compared with computer simulations based on the proposed model.

Published in:

Micro-Nanoelectronics, Technology and Applications (EAMTA), 2012 Argentine School of

Date of Conference:

9-10 Aug. 2012