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20 Gbit/s monolithic photoreceiver consisting of a waveguide pin photodiode and HEMT distributed amplifier

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8 Author(s)
K. Takahata ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Y. Muramoto ; H. Fukano ; K. Kato
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A monolithic photoreceiver OEIC for λ=1.55 μm consisting of a waveguide pin photodiode and an InAlAs/InGaAs HEMT distributed amplifier has been fabricated using a single-step MOVPE growth technique. It has a 3 dB-down frequency of 20 GHz and operates at 20 Gbit/s with a sensitivity of -10.4 dBm

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Electronics Letters  (Volume:33 ,  Issue: 18 )