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Design of Dual-Band ESD Protection for 24-/60-GHz Millimeter-Wave Circuits

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3 Author(s)
Li-Wei Chu ; Dept. of Photonics & the Display Inst., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chun-Yu Lin ; Ming-Dou Ker

To effectively protect the millimeter-wave (MMW) circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, a dual-band ESD protection cell for 24-/60-GHz ESD protection is presented in this paper. The proposed ESD protection cell consisted of a diode, a silicon-controlled rectifier, a PMOS, and two inductors. To verify the dual-band characteristics and ESD robustness, the proposed ESD protection circuit had been applied to a 24-/60-GHz low-noise amplifier (LNA). The measurement results showed over-2-kV human-body-model ESD robustness with little performance degradation on LNA. The proposed dual-band ESD protection cell was suitable for circuit designers for them to easily apply ESD protection in the dual-band MMW circuits.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:13 ,  Issue: 1 )

Date of Publication:

March 2013

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