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A Self-Rectifying \hbox {AlO}_{y} Bipolar RRAM With Sub-50- \mu\hbox {A} Set/Reset Current for Cross-Bar Architecture

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6 Author(s)
Tran, X.A. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Zhu, W. ; Liu, W.J. ; Yeo, Y.C.
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In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state (>; 700 at 0.2 V), a high on/off resistance ratio (>;103), a good retention characteristic (>; 104 s at 100 °C ), and a wide readout margin for cross-bar architecture (number of word line N >; 25 for worst case condition).

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 10 )