A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

In this letter, a bipolar resistive switching RAM based on Ni/AlO
y
/n
⁺
-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state (>; 700 at 0.2 V), a high on/off resistance ratio (>;10
³
), a good retention characteristic (>; 10
⁴
s at 100
^°
C ), and a wide readout margin for cross-bar architecture (number of word line N >; 2
⁵
for worst case condition).